2SB1197K transistors rev.a 1/2 low frequency transistor ( 32v, 0.8a) 2SB1197K z features 1) low v ce(sat) . v ce(sat) _ 0.5v d i c / i b = 0.5a / 50ma e 2) i c = 0.8a. 3) complements the 2sd1781k. z structure epitaxial planar type pnp silicon transistor z external dimensions (unit : mm) abbreviated symbol: ah ? all terminals have the same dimensions (1) emitter (2) base (3) collector rohm : smt3 eiaj : sc-59 0 ~ 0.1 2.8 0.2 1.6 0.3 0.6 1.1 0.8 0.1 0.15 0.4 2.9 0.2 1.9 0.2 0.95 0.95 + 0.2 ? 0.1 ? 0.1 + 0.2 + 0.1 ? 0.06 + 0.1 ? 0.05 (2) (1) (3) ? denotes h fe z z absolute maximum ratings (ta=25 q c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature parameter v cbo v ceo v ebo i c p c tj tstg ? 40 v v v a w c c ? 32 ? 5 ? 0.8 0.2 150 ? 55 to 150 symbol limits unit z z electrical characteristics (ta=25 q c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ? 40 ? 32 ? 5 ? ? 120 ? ? ? ? ? ? ? ? ? 200 12 ? ? ? ? 0.5 ? 0.5 390 ? 0.5 ? ? 30 vi c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 20v v eb = ? 4v v ce = ? 3v, i c = ? 100ma i c /i b = ? 0.5a/ ? 50ma v ce = ? 5v, i e = 50ma, f = 100mhz v cb = ? 10v, i e = 0a, f = 1mhz v v a a ? v mhz pf typ. max. unit conditions
2SB1197K transistors rev.a 2/2 z packaging specifications and h fe package code basic ordering unit (pieces) taping t146 3000 qr h fe 2SB1197K type h fe values are classified as follows : item q r h fe 120 to 270 180 to 390 z z electrical characteristic curves fig.1 grounded emitter propagation characteristics 0 ? 0.4 ? 0.8 ? 1.2 ? 1.6 ? 1000 ? 500 ? 200 ? 100 ? 50 ? 20 ? 10 ? 5 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ta = 25 c v ce = 6v collector current : i c (ma) base to emitter voltage : v be (v) fig.2 grounded emitter output characteristics ( ) ? 4 0 ? 8 ? 12 ? 16 ? 20 0 ? 40 ? 120 ? 80 ? 160 ? 200 ? 20 ? 100 ? 60 ? 140 ? 180 ? 1.0ma ? 0.9ma ? 0.8ma ? 0.7ma ? 0.6ma ? 0.5ma ? 0.4ma ? 0.3ma ? 0.2ma ? 0.1ma i b = 0ma ta = 25 c collector current : i c (ma) collector to emitter voltage : v ce (v) fig.3 grounded emitter output characteristics ( ) ? 0.2 0 ? 0.4 ? 0.6 ? 0.8 ? 1.0 0 ? 100 ? 300 ? 200 ? 400 ? 500 ? 12ma ? 10ma ? 8ma ? 6ma ? 4ma i b = ? 2ma ? 14ma ? 16ma ? 18ma ? 20ma ta = 25 c collector current : i c (ma) collector to emitter voltage : v ce (v) fig.4 dc current gain vs. collector current ta = 25 c ? 1m ? 10m ? 100m ? 1 1 20 10 5 2 50 100 200 500 1k v ce = ? 3v ? 2v ? 1v dc current gain : h fe collector current : i c (a) fig.5 collector-emitter saturation voltage vs. collector current collector saturation voltage : v ce (sat) (mv) collector current : i c (a) ta = 25 c ? 1m ? 10m ? 100m ? 1 ? 1 ? 20 ? 10 ? 5 ? 2 ? 50 ? 200 ? 100 ? 500 ? 1000 i c /i b = 50 20 10 fig.6 gain bandwidth product vs. emitter current emitter current : i e (a) transition frequency : f t (mhz) ta = 25 c v ce = ? 5v 1m 10m 100m 1 50 20 10 5 2 1 100 200 500 1000 fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) ta = 25 c f = 1mhz i e = 0a ? 0.1 ? 1 ? 10 ? 100 1 20 10 5 2 50 100 200 500 1000 c ib c ob
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm c o.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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